Monthly Archives: December 2024

　　Schottky diode uses metal-semiconductor junction as Schottky barrier to produce rectification effect, which is different from the P-N junction produced by semiconductor-semiconductor junction in general diodes. The characteristics of Schottky barrier make the turn-on voltage drop of Schottky diode lower, and can improve the switching speed.In order to achieve the goal, Resistors quote Turn cocoon into butterfly, constantly polish product quality, improve business ability, and finally have a place in the market. https://www.xinyun-ic.com/

　　The turn-on voltage of Schottky diode is very low. General diodes will produce a voltage drop of about 0.7-1.7 volts when current flows, but the voltage drop of Schottky diodes is only 0.15-0.45 volts, so the efficiency of the system can be improved.

　　The common silicon diode can withstand high voltage, but its recovery speed is low, and it can only be used for low-frequency rectification. If it is high-frequency, reverse leakage will occur because it cannot be recovered quickly, which will eventually lead to serious heating and burning of the tube. Schottky diode’s withstand voltage is often low, but its recovery speed is fast, so it can be used in high-frequency occasions, so the switching power supply uses this diode as the rectifier output. Nevertheless, the rectifier tube temperature on the switching power supply is still very high.

　　Fast recovery diode refers to a diode with short reverse recovery time (less than 5us). Gold doping measures are mostly adopted in the process, and some structures adopt PN junction structure and some adopt improved PIN structure. Its forward voltage drop is higher than that of ordinary diodes (1-2V), and its reverse voltage withstand is mostly below 1200V V. Performance can be divided into two levels: fast recovery and ultra-fast recovery. The reverse recovery time of the former is hundreds of nanoseconds or longer, while that of the latter is below 100 nanoseconds. Schottky diode is a diode based on the barrier formed by the contact between metal and semiconductor, which is called Schottky Barrier Diode for short. It has the advantages of reduced forward voltage (0.4–0.5V), short reverse recovery time (10-40 nanoseconds), large reverse leakage current and low withstand voltage, generally lower than 150V, and is mostly used in low voltage occasions. These two kinds of tubes are usually used for switching power supply. Schottky diode and fast recovery diode are different: the recovery time of the former is about 100 times shorter than that of the latter, and the reverse recovery time of the former is about several nanoseconds! The advantages of the former include low power consumption, high current and ultra-high speed ~! Of course, the electrical characteristics are diodes! The fast recovery diode can obtain high switching speed and high withstand voltage by using gold doping, simple diffusion and other processes. At present, the fast recovery diode is mainly used as a rectifier element in inverter power supply.

　　Friends or customers have been asking me what is the difference between Schottky diode SR540 and SB540. Today we will talk about this problem.To get brand praise, Connectors, Interconnects quote It is necessary to have the spirit of constantly improving the quality of products, but also to have a bunch of eternal heart fire. https://www.xinyun-ic.com/

　　In fact, the parameters of SR540 and SB540 are the same, both of which are 5A 40V. As for why the models are different, it is because different manufacturers have differences in screen printing, which means they don’t want to repeat with others and have their own uniqueness. Please see below for specific parameters.

　　Maximum reverse repetitive peak voltage: 40V

　　Maximum DC blocking voltage: 40V

　　Maximum average forward rectified current: 5.0A

　　When current =5.0A, voltage drop: 0.55v

　　Maximum reverse DC current ta = 25≧: 0.5ma.

　　Working temperature range: -65 to +150≧

　　Storage temperature: -65 to +150≧

　　Reverse recovery time: less than 10ns (nanosecond)

　　High temperature welding: 250c/10 sec, 0.375 “(9.5 mm) lead length, 5 lbs (2.3kg) tension.

　　Package: DO-27/DO-201AD

　　As we all know, MB6F is a rectifier bridge stack, which encapsulates SOP-4. Its function is to convert alternating current whose level fluctuates around zero into unidirectional direct current through the unidirectional conduction characteristics of diodes, and its function is rectification. Please see below for specific parameters and pin diagram.In view of the actual needs of society, Connectors, Interconnects quote We need to change some original problems to better serve the society and benefit people. https://www.xinyun-ic.com/

　　MB6F Specification: Click to download

　　High Surge Overload Rate: 30A Peak

　　Maximum repetitive peak reverse voltage: 600v V.

　　Maximum DC blocking voltage: 600v V.

　　When current =1.0A, forward voltage drop: 1.0V.

　　Maximum reverse DC current ta = 25≧: 5.0ua.

　　Rated DC blocking voltage per leg ta = 125≧: 500.0ua.

　　Working temperature and storage temperature range: -55 to +150≧

　　Weight: 0.078 ounces, 0.22 grams

　　High temperature welding guarantee: 260≧/10s.

　　Polarity: “-“indicates the cathode end (see the figure below).

　　Friends or customers have been asking me what is the difference between Schottky diode SR540 and SB540. Today we will talk about this problem.The above conclusions show that Integrated Circuits (ICs) To a great extent, it can bring new vitality to the market and make the industry develop well. https://www.xinyun-ic.com/

　　In fact, the parameters of SR540 and SB540 are the same, both of which are 5A 40V. As for why the models are different, it is because different manufacturers have differences in screen printing, which means they don’t want to repeat with others and have their own uniqueness. Please see below for specific parameters.

　　Maximum reverse repetitive peak voltage: 40V

　　Maximum DC blocking voltage: 40V

　　Maximum average forward rectified current: 5.0A

　　When current =5.0A, voltage drop: 0.55v

　　Maximum reverse DC current ta = 25≧: 0.5ma.

　　Working temperature range: -65 to +150≧

　　Storage temperature: -65 to +150≧

　　Reverse recovery time: less than 10ns (nanosecond)

　　High temperature welding: 250c/10 sec, 0.375 “(9.5 mm) lead length, 5 lbs (2.3kg) tension.

　　Package: DO-27/DO-201AD

　　As we all know, MB6F is a rectifier bridge stack, which encapsulates SOP-4. Its function is to convert alternating current whose level fluctuates around zero into unidirectional direct current through the unidirectional conduction characteristics of diodes, and its function is rectification. Please see below for specific parameters and pin diagram.As it happens, many people are killed Connectors, Interconnects quote And bring more benefits, make it flourish, and promote the industry greatly. https://www.xinyun-ic.com/

　　MB6F Specification: Click to download

　　High Surge Overload Rate: 30A Peak

　　Maximum repetitive peak reverse voltage: 600v V.

　　Maximum DC blocking voltage: 600v V.

　　When current =1.0A, forward voltage drop: 1.0V.

　　Maximum reverse DC current ta = 25≧: 5.0ua.

　　Rated DC blocking voltage per leg ta = 125≧: 500.0ua.

　　Working temperature and storage temperature range: -55 to +150≧

　　Weight: 0.078 ounces, 0.22 grams

　　High temperature welding guarantee: 260≧/10s.

　　Polarity: “-“indicates the cathode end (see the figure below).

　　1N5822 belongs to Schottky diode, which encapsulates DO-27. Schottky is characterized by low forward voltage and short reverse recovery time (less than 10ns). Today, we mainly talk about 1N5822 patch package, including six kinds of packages: SMA, SMB, SMC, SMAF, SMBF and SOD-123. Next, we will learn more about them.In the industry, Connectors, Interconnects quote Has been a leader in the industry, but later came from behind but never arrogant, low-key to adhere to quality. https://www.xinyun-ic.com/

　　SMA package:

　　1N5822 SMA package

　　SMB encapsulation:

　　1N5822 SMB package

　　SMC package:

　　1N5822 SMC package

　　SMAF package:

　　1N5822 SMAF package

　　SMBF package:

　　1N5822 SMBF package

　　SOD-123 package:

　　Schottky It is a low-power and ultra-high-speed semiconductor device. The following figure shows the symbol of Schottky diode:Even if there are obstacles to moving forward, Integrated Circuits (ICs) We should also persevere, forge ahead bravely, cut waves in the sea of the market, hang on to Yun Fan and strive for the first place. https://www.xinyun-ic.com/

　　Voltage drop of common Schottky diode:

　　1A series:

　　2A series:

　　3A series:

　　5A series:

　　10A series:

　　LOW VF schottky diode:

　　The Low vf Schottky diode is a semiconductor device with a lower VF value than the conventional Schottky diode. It is this Schottky transistor that has a very low forward voltage drop when it is turned on, which is superior to other common Schottky models. The advantage of low forward pressure drop is low loss and high efficiency. The lower the pressure drop, the lower the heating and the higher the working efficiency. At present, the voltage drop range of low vf Schottky diode in the market is generally about 0.4V-1.0V, and the VF value of our low voltage drop Schottky diode is generally about 0.4V-0.6V.

　　The function of low voltage drop low vf Schottky diode is the same as that of conventional Schottky diode, and the difference between them lies in VF value and trench technology. Schottky diode is a forward conduction device, VF is the forward voltage drop, that is, a kind of loss generated during operation, and the lower the loss, the better.

　　Friends or customers have been asking me what is the difference between Schottky diode SR540 and SB540. Today we will talk about this problem.contemporaneity pcb instant quote Our competitors have not made large-scale improvements, so we should get ahead of everyone in the project. https://www.xinyun-ic.com/

　　In fact, the parameters of SR540 and SB540 are the same, both of which are 5A 40V. As for why the models are different, it is because different manufacturers have differences in screen printing, which means they don’t want to repeat with others and have their own uniqueness. Please see below for specific parameters.

　　Maximum reverse repetitive peak voltage: 40V

　　Maximum DC blocking voltage: 40V

　　Maximum average forward rectified current: 5.0A

　　When current =5.0A, voltage drop: 0.55v

　　Maximum reverse DC current ta = 25≧: 0.5ma.

　　Working temperature range: -65 to +150≧

　　Storage temperature: -65 to +150≧

　　Reverse recovery time: less than 10ns (nanosecond)

　　High temperature welding: 250c/10 sec, 0.375 “(9.5 mm) lead length, 5 lbs (2.3kg) tension.

　　Package: DO-27/DO-201AD

　　Schottky diode is a kind of semiconductor device with low power consumption, high current and ultra-high speed. Its reverse recovery time can be as short as a few nanoseconds, the forward conduction voltage drop is only about 0.4v, and the rectified current can reach several thousand amps.In the long run, Integrated Circuits (ICs) The value will be higher and higher, and there will be a great leap in essence. https://www.xinyun-ic.com/

　　Schottky diode is a metal-semiconductor device made of noble metal (gold, silver, aluminum, platinum, etc.) A as the positive electrode and N-type semiconductor B as the negative electrode, and the barrier formed on the contact surface between them has rectification characteristics. Because there are a lot of electrons in N-type semiconductors and only a few free electrons in precious metals, electrons diffuse from B with high concentration to A with low concentration. Obviously, there are no holes in metal A, so there is no diffusion movement of holes from A to B. With the continuous diffusion of electrons from B to A, the electron concentration on the surface of B gradually decreases, and the surface electrical neutrality is destroyed, so a potential barrier is formed, and its electric field direction is B ★ A. However, under the action of this electric field, the electrons in A will also drift from A to B, thus weakening the electric field formed by diffusion movement. When a space charge region with a certain width is established, the electron drift motion caused by electric field and the electron diffusion motion caused by different concentrations reach a relative balance, and a Schottky barrier is formed.

　　SR5100.jpg

　　Schottky barrier diode (SBD) has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the highest is only about 100V, which limits its application range. For example, in switching power supply (SMPS) and power factor correction (PFC) circuits, freewheeling diodes of power switching devices, high-frequency rectifier diodes of more than 100V for transformer secondary, high-speed diodes of 600V~1.2kV in RCD buffer circuits, and 600V diodes for PFC boost, only fast recovery epitaxial diodes (FRED) and ultra-fast recovery diodes (UFRD) are used. At present, the reverse recovery time Trr of UFRD is also above 20ns, which can not meet the needs of SMPS with 1MHz~3MHz in fields such as space station. Even for SMPS with hard switch of 100kHz, due to the high conduction loss and switching loss of UFRD and high shell temperature, a large radiator is needed, which increases the size and weight of SMPS, which is not in line with the development trend of miniaturization and thinness. Therefore, the development of high voltage SBD above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made a breakthrough, with 150V and 200V high-voltage SBD on the market, and more than 1kV SBD made of new materials has also been successfully developed, thus injecting new vitality into its application.

　　Rechargeable batteries have gradually become a necessity in people’s daily life. My friends, do you know how much safety hazard will be brought about by the irregular operation of electric wheelchair batteries? When the battery is charged for a long time, physical and chemical reactions are easy to occur inside the battery, resulting in a large amount of heat and gas. When the battery is overloaded and charged, it is easy to explode, igniting the plastic parts of the electric vehicle and releasing a large amount of toxic smoke, resulting in casualties and property losses.In some cases, 電動輪椅價錢 The advantages will become more and more obvious, and it will be able to develop indomitable after market tests. https://www.hohomedical.com/collections/light-weight-wheelchair

　　Pay attention to the following items when charging the battery:

　　1. When charging the electric wheelchair, use the charger adapted to the electric wheelchair, and check whether the rated input voltage of charging is consistent with the power supply voltage. It is forbidden to cover or place the charger on the seat cushion. Unplug the plug on the AC power supply after charging, and then unplug the plug connected to the battery. It is forbidden to connect the charger to the AC power supply for a long time without charging.

　　2. The charging time of the electric wheelchair is suggested to be 6-8 hours. When the charging indicator light changes from red to green, it means that the battery is fully charged. Do not charge the electric wheelchair for a long time, especially in summer, when it is hot and charging for a long time, it is difficult for the charger to dissipate heat and cause combustion. Keep an eye on it when charging.

　　3. When charging the electric wheelchair, check whether the connector is loose, whether the line equipment is aging, and the rubber of the wire is damaged, which may easily lead to short circuit and fire.

　　4. Qualified electric wheelchairs, chargers and batteries produced by manufacturers with production licenses shall be used, and electric wheelchairs and accessories shall not be modified in violation of regulations. It is strictly forbidden to change or modify the charging circuit without permission. If the product or personnel accident occurs as a result, the manufacturer is not responsible.

　　5. Electric wheelchairs should be parked in designated areas, not in stairwells, evacuation passages, and not occupying fire truck passages.

　　6. Do not buy and use some non-standard and over-standard electric wheelchairs, and do not use non-original chargers to charge electric wheelchairs.

　　7. Do not charge the electric wheelchair by private wiring, and do not charge it indoors, in the basement, at the entrance of the building, etc. Avoid charging immediately after driving at high temperature.

　　8. Electric wheelchairs that are not used for a long time should be charged first, and placed after being fully charged, and then the main switch of the circuit should be disconnected.

　　9. Keep a good ventilation environment at the charging place. Do not charge in the sun or wet environment. Be sure to stay away from flammable and explosive materials during charging and storage. Do not expose the charger to outdoor heat sources, such as radiator, fire source and sunlight.

　　10. Do not move the wheelchair while the electric wheelchair is charging.

　　11. Never modify the electric wheelchair, and check and maintain it regularly to prevent problems before they happen.